- Operating Temperature :
- Mounting Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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23 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,236
In-stock
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NXP USA Inc. | MOSFET N-CH 75V 77A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 158W (Tc) | N-Channel | - | 75V | 77A (Tc) | 10.4 mOhm @ 25A, 10V | 2.8V @ 1mA | 81nC @ 10V | 5251pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
808
In-stock
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Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | |||
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VIEW |
2,412
In-stock
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Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,065
In-stock
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Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,437
In-stock
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ON Semiconductor | MOSFET N-CH 60V 60A TO220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 2.4W (Ta), 150W (Tj) | N-Channel | - | 60V | 60A (Ta) | 14 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3220pF @ 25V | 10V | ±20V | |||
|
VIEW |
766
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,643
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 80V 11A TO262 | SDMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 2.1W (Ta), 333W (Tc) | N-Channel | - | 80V | 11A (Ta), 105A (Tc) | 7.2 mOhm @ 20A, 10V | 3.7V @ 250µA | 81nC @ 10V | 4870pF @ 40V | 7V, 10V | ±25V | |||
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|
VIEW |
2,945
In-stock
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Infineon Technologies | MOSFET N CH 100V 56A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | |||
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|
VIEW |
1,430
In-stock
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ON Semiconductor | MOSFET N-CH 60V 60A TO220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 2.4W (Ta), 150W (Tj) | N-Channel | - | 60V | 60A (Ta) | 14 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3220pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,105
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,882
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,379
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 80V 11A TO220 | SDMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 2.1W (Ta), 333W (Tc) | N-Channel | - | 80V | 11A (Ta), 105A (Tc) | 7.2 mOhm @ 20A, 10V | 3.7V @ 250µA | 81nC @ 10V | 4870pF @ 40V | 7V, 10V | ±25V | |||
|
VIEW |
3,053
In-stock
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ON Semiconductor | MOSFET N-CH 60V 60A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 2.4W (Ta), 150W (Tj) | N-Channel | - | 60V | 60A (Ta) | 14 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3220pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,155
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 14A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 500V | 14A (Tc) | 450 mOhm @ 8.4A, 10V | 4V @ 250µA | 81nC @ 10V | 1910pF @ 25V | 10V | ±30V | |||
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VIEW |
3,427
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 56.6A TO220 | ThunderFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Full Pack | 39W (Tc) | N-Channel | - | 100V | 56.6A (Tc) | 6.1 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3300pF @ 50V | 7.5V, 10V | ±20V | |||
|
VIEW |
1,684
In-stock
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Infineon Technologies | MOSFET N CH 100V 35A TO220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 42W (Tc) | N-Channel | - | 100V | 35A (Tc) | 13.5 mOhm @ 21A, 10V | 4V @ 100µA | 81nC @ 10V | 2998pF @ 50V | 10V | ±20V | |||
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|
VIEW |
3,113
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,264
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 14A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 500V | 14A (Tc) | 450 mOhm @ 8.4A, 10V | 4V @ 250µA | 81nC @ 10V | 1910pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,027
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 148A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 192W (Tc) | N-Channel | - | 100V | 148A (Ta) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,655
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,454
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 65A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 100V | 65A (Tc) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
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|
VIEW |
872
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 80V 72A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 192W (Tc) | N-Channel | - | 80V | 72A (Ta) | 4.3 mOhm @ 36A, 10V | 4V @ 1mA | 81nC @ 10V | 5500pF @ 40V | 10V | ±20V | |||
|
VIEW |
709
In-stock
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Texas Instruments | MOSFET N-CH 60V 200A TO-220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 300W (Tc) | N-Channel | - | 60V | 200A (Ta) | 2 mOhm @ 100A, 10V | 2.4V @ 250µA | 81nC @ 10V | 6620pF @ 30V | 4.5V, 10V | ±20V | |||
