Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,993
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Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP HTMOS™ Active Tube MOSFET (Metal Oxide) - Through Hole 8-CDIP Exposed Pad - 50W (Tj) N-Channel - 55V - 400 mOhm @ 100mA, 5V 2.4V @ 100µA 4.3nC @ 5V 290pF @ 28V 5V 10V
HTNFET-D
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1,197
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Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP HTMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 225°C (TJ) Through Hole 8-CDIP Exposed Pad 8-CDIP-EP 50W (Tj) N-Channel - 55V - 400 mOhm @ 100mA, 5V 2.4V @ 100µA 4.3nC @ 5V 290pF @ 28V 5V 10V
IRL40B215
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984
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Infineon Technologies MOSFET N-CH 40V 120A HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 143W (Tc) N-Channel - 40V 120A (Tc) 2.7 mOhm @ 98A, 10V 2.4V @ 100µA 84nC @ 4.5V 5225pF @ 25V 4.5V, 10V ±20V
C2M1000170D
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2,972
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Cree/Wolfspeed MOSFET N-CH 1700V 4.9A TO247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 69W (Tc) N-Channel - 1700V 4.9A (Tc) 1.1 Ohm @ 2A, 20V 2.4V @ 100µA 13nC @ 20V 191pF @ 1000V 20V +25V, -10V