- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,993
In-stock
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Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | HTMOS™ | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | 8-CDIP Exposed Pad | - | 50W (Tj) | N-Channel | - | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | |||
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VIEW |
1,197
In-stock
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Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | HTMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP Exposed Pad | 8-CDIP-EP | 50W (Tj) | N-Channel | - | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | |||
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VIEW |
984
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 143W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.7 mOhm @ 98A, 10V | 2.4V @ 100µA | 84nC @ 4.5V | 5225pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,972
In-stock
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Cree/Wolfspeed | MOSFET N-CH 1700V 4.9A TO247 | Z-FET™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 69W (Tc) | N-Channel | - | 1700V | 4.9A (Tc) | 1.1 Ohm @ 2A, 20V | 2.4V @ 100µA | 13nC @ 20V | 191pF @ 1000V | 20V | +25V, -10V |