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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,861
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250mA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,824
In-stock
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IXYS | MOSFET N-CH 85V 130A ISOPLUS I4 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | 200W (Tc) | N-Channel | - | 85V | 130A (Tc) | 5.3 mOhm @ 50A, 10V | 4V @ 250mA | 187nC @ 10V | 9900pF @ 25V | 10V | ±20V | |||
