Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SCT2H12NZGC11
RFQ
VIEW
RFQ
2,000
In-stock
Rohm Semiconductor MOSFET N-CH 1700V 3.7A - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-3PFM, SC-93-3 TO-3PFM 35W (Tc) N-Channel 1700V 3.7A (Tc) 1.5 Ohm @ 1.1A, 18V 4V @ 900µA 14nC @ 18V 184pF @ 800V 18V +22V, -6V
TK9A90E,S4X
RFQ
VIEW
RFQ
3,677
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO220SIS π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel 900V 9A (Ta) 1.3 Ohm @ 4.5A, 10V 4V @ 900µA 46nC @ 10V 2000pF @ 25V 10V ±30V
SCT2450KEC
RFQ
VIEW
RFQ
1,775
In-stock
Rohm Semiconductor MOSFET N-CH 1200V 10A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 85W (Tc) N-Channel 1200V 10A (Tc) 585 mOhm @ 3A, 18V 4V @ 900µA 27nC @ 18V 463pF @ 800V 18V +22V, -6V
TK9J90E,S1E
RFQ
VIEW
RFQ
3,303
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO-3PN - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 250W (Tc) N-Channel 900V 9A (Ta) 1.3 Ohm @ 4.5A, 10V 4V @ 900µA 46nC @ 10V 2000pF @ 25V 10V ±30V