Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPU50R1K4CEAKMA1
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1,486
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Infineon Technologies MOSFET N-CH 500V 3.1A TO-251 CoolMOS™ CE Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 42W (Tc) N-Channel - 500V 3.1A (Tc) 1.4 Ohm @ 900mA, 13V 3.5V @ 70µA 8.2nC @ 10V 178pF @ 100V 13V ±20V
IPP80R1K4P7XKSA1
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2,530
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Infineon Technologies MOSFET N-CH 800V 4A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 32W (Tc) N-Channel Super Junction 800V 4A (Tc) 1.4 Ohm @ 1.4A, 10V 3.5V @ 70µA 10nC @ 10V 250pF @ 500V 10V ±20V
IPSA70R2K0CEAKMA1
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1,217
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Infineon Technologies MOSFET N-CHANNEL 700V 4A IPAK - Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak IPAK (TO-251) 42W (Tc) N-Channel - 700V 4A (Tc) 2 Ohm @ 1A, 10V 3.5V @ 70µA 7.8nC @ 10V 163pF @ 100V 10V ±20V
IPS70R2K0CEAKMA1
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3,486
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Infineon Technologies MOSFET NCH 700V 4A TO251 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 42W (Tc) N-Channel Super Junction 700V 4A (Tc) 2 Ohm @ 1A, 10V 3.5V @ 70µA 7.8nC @ 10V 163pF @ 100V 10V ±20V
IPU50R1K4CEBKMA1
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RFQ
637
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Infineon Technologies MOSFET N-CH 500V 3.1A TO-251 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 25W (Tc) N-Channel - 500V 3.1A (Tc) 1.4 Ohm @ 900mA, 13V 3.5V @ 70µA 8.2nC @ 10V 178pF @ 100V 13V ±20V