Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF8734PBF
RFQ
VIEW
RFQ
2,002
In-stock
Infineon Technologies MOSFET N-CH 30V 21A 8-SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 21A (Ta) 3.5 mOhm @ 21A, 10V 2.35V @ 50µA 30nC @ 4.5V 3175pF @ 15V 4.5V, 10V ±20V
IRLU8726PBF
RFQ
VIEW
RFQ
3,336
In-stock
Infineon Technologies MOSFET N-CH 30V 86A IPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 75W (Tc) N-Channel - 30V 86A (Tc) 5.8 mOhm @ 25A, 10V 2.35V @ 50µA 23nC @ 4.5V 2150pF @ 15V 4.5V, 10V ±20V
IRF8736PBF
RFQ
VIEW
RFQ
2,116
In-stock
Infineon Technologies MOSFET N-CH 30V 18A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 18A (Ta) 4.8 mOhm @ 18A, 10V 2.35V @ 50µA 26nC @ 4.5V 2315pF @ 15V 4.5V, 10V ±20V
IRLB8748PBF
RFQ
VIEW
RFQ
3,901
In-stock
Infineon Technologies MOSFET N-CH 30V 78A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) N-Channel - 30V 78A (Tc) 4.8 mOhm @ 40A, 10V 2.35V @ 50µA 23nC @ 4.5V 2139pF @ 15V 4.5V, 10V ±20V
IRLR8726PBF
RFQ
VIEW
RFQ
3,155
In-stock
Infineon Technologies MOSFET N-CH 30V 86A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 75W (Tc) N-Channel - 30V 86A (Tc) 5.8 mOhm @ 25A, 10V 2.35V @ 50µA 23nC @ 4.5V 2150pF @ 15V 4.5V, 10V ±20V