- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,437
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A TO262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 100W (Tc) | N-Channel | 200V | 18A (Tc) | 105 mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | 10V | ±20V | |||
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VIEW |
2,740
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 100W (Tc) | N-Channel | 200V | 18A (Tc) | 105 mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | 10V | ±20V | |||
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VIEW |
2,493
In-stock
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Infineon Technologies | MOSFET N-CH 80V 10A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 80V | 10A (Ta) | 13.4 mOhm @ 10A, 10V | 4.9V @ 100µA | 41nC @ 10V | 1620pF @ 25V | 10V | ±20V | |||
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VIEW |
1,856
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | |||
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VIEW |
2,336
In-stock
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Infineon Technologies | MOSFET N-CH 60V 12A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 60V | 12A (Ta) | 9.4 mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1560pF @ 25V | 10V | ±20V | |||
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VIEW |
3,752
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 100W (Tc) | N-Channel | 200V | 18A (Tc) | 100 mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | 10V | ±20V | |||
