Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTP8G202NG
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RFQ
1,719
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ON Semiconductor MOSFET N-CH 600V 9A TO220 - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 65W (Tc) N-Channel 600V 9A (Tc) 350 mOhm @ 5.5A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 400V 8V ±18V
TPH3202LS
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RFQ
755
In-stock
Transphorm MOSFET N-CH 600V 9A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Surface Mount 3-PowerDFN PQFN (8x8) 65W (Tc) N-Channel 600V 9A (Tc) 350 mOhm @ 5.5A, 8V 2.5V @ 250µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
TPH3202LD
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RFQ
2,306
In-stock
Transphorm MOSFET N-CH 600V 9A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Surface Mount 4-PowerDFN PQFN (8x8) 65W (Tc) N-Channel 600V 9A (Tc) 350 mOhm @ 5.5A, 8V 2.5V @ 250µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
TPH3202PD
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RFQ
3,743
In-stock
Transphorm MOSFET N-CH 600V 9A TO220 - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 65W (Tc) N-Channel 600V 9A (Tc) 350 mOhm @ 5.5A, 8V 2.5V @ 250µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
TPH3202PS
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RFQ
1,102
In-stock
Transphorm MOSFET N-CH 600V 9A TO220 - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 65W (Tc) N-Channel 600V 9A (Tc) 350 mOhm @ 5.5A, 8V 2.5V @ 250µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V