Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM8N70CI C0G
RFQ
VIEW
RFQ
3,139
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 700V 8A ITO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel - 700V 8A (Tc) 900 mOhm @ 4A, 10V 4V @ 250µA 32nC @ 10V 2006pF @ 25V 10V ±30V
AOT8N60
RFQ
VIEW
RFQ
3,098
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 8A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 208W (Tc) N-Channel - 600V 8A (Tc) 900 mOhm @ 4A, 10V 4.5V @ 250µA 35nC @ 10V 1370pF @ 25V 10V ±30V
AOTF8N60
RFQ
VIEW
RFQ
2,230
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 8A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 50W (Tc) N-Channel - 600V 8A (Tc) 900 mOhm @ 4A, 10V 4.5V @ 250µA 35nC @ 10V 1370pF @ 25V 10V ±30V
TK8A45D(STA4,Q,M)
RFQ
VIEW
RFQ
643
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 450V 8A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 450V 8A (Ta) 900 mOhm @ 4A, 10V 4.4V @ 1mA 16nC @ 10V 700pF @ 25V 10V ±30V