Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP80N06S2L11AKSA1
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3,084
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Infineon Technologies MOSFET N-CH 55V 80A TO220-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 158W (Tc) N-Channel - 55V 80A (Tc) 11 mOhm @ 60A, 10V 2V @ 93µA 80nC @ 10V 2075pF @ 25V 10V ±20V
IPI80N06S2L11AKSA1
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3,455
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Infineon Technologies MOSFET N-CH 55V 80A TO262-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 158W (Tc) N-Channel - 55V 80A (Tc) 11 mOhm @ 60A, 10V 2V @ 93µA 80nC @ 10V 2075pF @ 25V 10V ±20V
IXFX170N20T
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3,073
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IXYS MOSFET N-CH 200V 170A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1150W (Tc) N-Channel - 200V 170A (Tc) 11 mOhm @ 60A, 10V 5V @ 4mA 265nC @ 10V 19600pF @ 25V 10V ±20V
IXFK170N20T
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3,558
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IXYS MOSFET N-CH 200V 170A TO-264 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1150W (Tc) N-Channel - 200V 170A (Tc) 11 mOhm @ 60A, 10V 5V @ 4mA 265nC @ 10V 19600pF @ 25V 10V ±20V