- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,757
In-stock
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Infineon Technologies | MOSFET N-CH 30V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 30V | 80A (Tc) | 3.1 mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,157
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 30V | 80A (Tc) | 3.1 mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,003
In-stock
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ON Semiconductor | MOSFET N-CH 40V 80A TO-220AB | PowerTrench® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 254W (Tc) | N-Channel | - | 40V | 23A (Ta), 80A (Tc) | 3.1 mOhm @ 80A, 10V | 4V @ 250µA | 235nC @ 10V | 12200pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,126
In-stock
|
ON Semiconductor | MOSFET N-CH 40V 80A TO-220 | Automotive, AEC-Q101, PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 254W (Tc) | N-Channel | - | 40V | 23A (Ta), 80A (Tc) | 3.1 mOhm @ 80A, 10V | 4V @ 250µA | 235nC @ 10V | 12200pF @ 25V | 10V | ±20V | |||
