Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF450
RFQ
VIEW
RFQ
750
In-stock
Infineon Technologies MOSFET N-CH 500V 12A TO-3-3 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AA, TO-3 TO-204AA (TO-3) 150W (Tc) N-Channel 500V 12A (Tc) 500 mOhm @ 12A, 10V 4V @ 250µA 120nC @ 10V 2700pF @ 25V 10V ±20V
APT22F80B
RFQ
VIEW
RFQ
646
In-stock
Microsemi Corporation MOSFET N-CH 800V 22A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 625W (Tc) N-Channel 800V 23A (Tc) 500 mOhm @ 12A, 10V 5V @ 1mA 150nC @ 10V 4595pF @ 25V 10V ±30V