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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK10A60W,S4X	RFQ VIEW	PDF RFQ	808 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 9.7A TO-220		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-220-3 Full Pack	TO-220	30W (Tc)	N-Channel	-	600V	9.7A (Ta)	380 mOhm @ 4.9A, 10V	3.7V @ 500µA	20nC @ 10V	720pF @ 300V	10V	±30V
	TK380A60Y,S4X	RFQ VIEW	PDF RFQ	2,227 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 9.7A TO220SIS		DTMOSV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W	N-Channel	-	600V	9.7A (Tc)	380 mOhm @ 4.9A, 10V	4V @ 360µA	20nC @ 10V	590pF @ 300V	10V	±30V
	TK10A60W,S4VX	RFQ VIEW	PDF RFQ	950 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 9.7A TO-220SIS		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	Super Junction	600V	9.7A (Ta)	380 mOhm @ 4.9A, 10V	3.7V @ 500µA	20nC @ 10V	700pF @ 300V	10V	±30V
	TK10E60W,S1VX	RFQ VIEW	PDF RFQ	3,760 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 9.7A TO-220		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	100W (Tc)	N-Channel	Super Junction	600V	9.7A (Ta)	380 mOhm @ 4.9A, 10V	3.7V @ 500µA	20nC @ 10V	700pF @ 300V	10V	±30V

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