Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFSL33N15D
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RFQ
1,413
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Infineon Technologies MOSFET N-CH 150V 33A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 170W (Tc) N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V
IRFB33N15D
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RFQ
3,163
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Infineon Technologies MOSFET N-CH 150V 33A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 170W (Tc) N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V
IRFS33N15D
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RFQ
3,705
In-stock
Infineon Technologies MOSFET N-CH 150V 33A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 170W (Tc) N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V
IRFS33N15DPBF
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RFQ
1,607
In-stock
Infineon Technologies MOSFET N-CH 150V 33A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 170W (Tc) N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V
IRFB33N15DPBF
RFQ
VIEW
RFQ
2,671
In-stock
Infineon Technologies MOSFET N-CH 150V 33A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 170W (Tc) N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V