Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFI734GPBF
RFQ
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RFQ
955
In-stock
Vishay Siliconix MOSFET N-CH 450V 3.4A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel - 450V 3.4A (Tc) 1.2 Ohm @ 2A, 10V 4V @ 250µA 45nC @ 10V 680pF @ 25V 10V ±20V
IRFI734G
RFQ
VIEW
RFQ
3,024
In-stock
Vishay Siliconix MOSFET N-CH 450V 3.4A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel - 450V 3.4A (Tc) 1.2 Ohm @ 2A, 10V 4V @ 250µA 45nC @ 10V 680pF @ 25V 10V ±20V
TSM7NC60CF C0G
RFQ
VIEW
RFQ
2,530
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 7A ITO220S - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack ITO-220S 44.6W (Tc) N-Channel - 600V 7A (Tc) 1.2 Ohm @ 2A, 10V 4.5V @ 250µA 24nC @ 10V 1169pF @ 50V 10V ±30V
FCP4N60
RFQ
VIEW
RFQ
1,585
In-stock
ON Semiconductor MOSFET N-CH 600V 3.9A TO-220 SuperFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 50W (Tc) N-Channel - 600V 3.9A (Tc) 1.2 Ohm @ 2A, 10V 5V @ 250µA 16.6nC @ 10V 540pF @ 25V 10V ±30V