- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
965
In-stock
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Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,751
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | 10V | ±20V | |||
|
VIEW |
2,153
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,143
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,087
In-stock
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IXYS | MOSFET N-CH 55V 360A TO-247 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 935W (Tc) | N-Channel | - | 55V | 360A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 250µA | 330nC @ 10V | 20000pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,769
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,847
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | 10V | ±20V | |||
|
VIEW |
2,080
In-stock
|
IXYS | MOSFET N-CH 55V 360A TO268 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 935W (Tc) | N-Channel | - | 55V | 360A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 250µA | 330nC @ 10V | 20000pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,893
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 294W (Tc) | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | 6V, 10V | ±20V | |||
|
VIEW |
2,981
In-stock
|
Infineon Technologies | MOSFET N CH 60V 195A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 294W (Tc) | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | 6V, 10V | ±20V | |||
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|
VIEW |
801
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | 10V | ±20V | |||
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|
VIEW |
3,441
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | 10V | ±20V | |||
|
VIEW |
2,194
In-stock
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Infineon Technologies | MOSFET N CH 60V 195A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 294W (Tc) | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | 6V, 10V | ±20V | |||
