Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFS7437PBF
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RFQ
1,831
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Infineon Technologies MOSFET N CH 40V 195A D2PAK HEXFET®, StrongIRFET™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 40V 195A (Tc) 1.8 mOhm @ 100A, 10V 3.9V @ 150µA 225nC @ 10V 7330pF @ 25V 6V, 10V ±20V
IRFP7718PBF
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RFQ
3,758
In-stock
Infineon Technologies MOSFET N CH 75V 195A TO247 HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 517W (Tc) N-Channel - 75V 195A (Tc) 1.8 mOhm @ 100A, 10V 3.7V @ 250µA 830nC @ 10V 29550pF @ 25V 6V, 10V ±20V
IXTT440N055T2
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RFQ
1,970
In-stock
IXYS MOSFET N-CH 55V 440A TO-268 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 1000W (Tc) N-Channel - 55V 440A (Tc) 1.8 mOhm @ 100A, 10V 4V @ 250µA 405nC @ 10V 25000pF @ 25V 10V ±20V
IXTH440N055T2
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RFQ
2,295
In-stock
IXYS MOSFET N-CH 55V 440A TO-247 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 1000W (Tc) N-Channel - 55V 440A (Tc) 1.8 mOhm @ 100A, 10V 4V @ 250µA 405nC @ 10V 25000pF @ 25V 10V ±20V
IRFSL7437PBF
RFQ
VIEW
RFQ
765
In-stock
Infineon Technologies MOSFET N CH 40V 195A TO-262 HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 230W (Tc) N-Channel - 40V 195A (Tc) 1.8 mOhm @ 100A, 10V 3.9V @ 150µA 225nC @ 10V 7330pF @ 25V 6V, 10V ±20V
AUIRFS8407
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RFQ
2,272
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Infineon Technologies MOSFET N-CH 40V 195A D2PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 40V 195A (Tc) 1.8 mOhm @ 100A, 10V 4V @ 150µA 225nC @ 10V 7330pF @ 25V 10V ±20V