Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK50E08K3,S1X(S
RFQ
VIEW
RFQ
3,548
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 75V 50A TO-220AB - Active Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220-3 - N-Channel - 75V 50A (Tc) 12 mOhm @ 25A, 10V - 55nC @ 10V - - -
IXTP76N075T
RFQ
VIEW
RFQ
1,442
In-stock
IXYS MOSFET N-CH 75V 76A TO-220 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 176W (Tc) N-Channel - 75V 76A (Tc) 12 mOhm @ 25A, 10V 4V @ 50µA 57nC @ 10V 2580pF @ 25V 10V ±20V
IXTA76N075T
RFQ
VIEW
RFQ
718
In-stock
IXYS MOSFET N-CH 75V 76A TO-263 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 176W (Tc) N-Channel - 75V 76A (Tc) 12 mOhm @ 25A, 10V 4V @ 50µA 57nC @ 10V 2580pF @ 25V 10V ±20V
IXTA70N075T2
RFQ
VIEW
RFQ
3,162
In-stock
IXYS MOSFET N-CH 75V 70A TO-263 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 150W (Tc) N-Channel - 75V 70A (Tc) 12 mOhm @ 25A, 10V 4V @ 250µA 46nC @ 10V 2725pF @ 25V 10V ±20V
IXTP70N075T2
RFQ
VIEW
RFQ
1,926
In-stock
IXYS MOSFET N-CH 75V 70A TO-220 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 75V 70A (Tc) 12 mOhm @ 25A, 10V 4V @ 250µA 46nC @ 10V 2725pF @ 25V 10V ±20V