Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BUK9E04-30B,127
RFQ
VIEW
RFQ
1,565
In-stock
NXP USA Inc. MOSFET N-CH 30V 75A I2PAK TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 254W (Tc) N-Channel 30V 75A (Tc) 3 mOhm @ 25A, 10V 2V @ 1mA 56nC @ 5V 6526pF @ 25V 4.5V, 10V ±15V
PSMN3R0-60ES,127
RFQ
VIEW
RFQ
1,442
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 100A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 306W (Tc) N-Channel 60V 100A (Tc) 3 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8079pF @ 30V 10V ±20V
PSMN3R0-60PS,127
RFQ
VIEW
RFQ
1,733
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 100A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 306W (Tc) N-Channel 60V 100A (Tc) 3 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8079pF @ 30V 10V ±20V