Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRFS4410Z
RFQ
VIEW
RFQ
3,344
In-stock
Infineon Technologies MOSFET N-CH 100V 97A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 100V 97A (Tc) 9 mOhm @ 58A, 10V 4V @ 150µA 120nC @ 10V 4820pF @ 50V 10V ±20V
NTP5863NG
RFQ
VIEW
RFQ
3,710
In-stock
ON Semiconductor MOSFET N-CH 60V 97A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 60V 97A (Tc) 7.8 mOhm @ 20A, 10V 4V @ 250µA 55nC @ 10V 3200pF @ 25V 10V ±20V
IRFS3507
RFQ
VIEW
RFQ
600
In-stock
Infineon Technologies MOSFET N-CH 75V 97A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 190W (Tc) N-Channel - 75V 97A (Tc) 8.8 mOhm @ 58A, 10V 4V @ 100µA 130nC @ 10V 3540pF @ 50V 10V ±20V
IRFSL3507
RFQ
VIEW
RFQ
831
In-stock
Infineon Technologies MOSFET N-CH 75V 97A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 190W (Tc) N-Channel - 75V 97A (Tc) 8.8 mOhm @ 58A, 10V 4V @ 100µA 130nC @ 10V 3540pF @ 50V 10V ±20V
IRFB3507PBF
RFQ
VIEW
RFQ
1,582
In-stock
Infineon Technologies MOSFET N-CH 75V 97A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 190W (Tc) N-Channel - 75V 97A (Tc) 8.8 mOhm @ 58A, 10V 4V @ 100µA 130nC @ 10V 3540pF @ 50V 10V ±20V
IRFB3507
RFQ
VIEW
RFQ
2,822
In-stock
Infineon Technologies MOSFET N-CH 75V 97A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 190W (Tc) N-Channel - 75V 97A (Tc) 8.8 mOhm @ 58A, 10V 4V @ 100µA 130nC @ 10V 3540pF @ 50V 10V ±20V
IRFB4410ZPBF
RFQ
VIEW
RFQ
644
In-stock
Infineon Technologies MOSFET N-CH 100V 97A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 100V 97A (Tc) 9 mOhm @ 58A, 10V 4V @ 150µA 120nC @ 10V 4820pF @ 50V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
3,237
In-stock
Microsemi Corporation MOSFET N-CH 650V 97A TO-264 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 862W (Tc) N-Channel - 650V 97A (Tc) 41 mOhm @ 48.5A, 10V 3.5V @ 2.96mA 300nC @ 10V 7650pF @ 25V 10V ±20V
IRF100B202
RFQ
VIEW
RFQ
1,233
In-stock
Infineon Technologies MOSFET N-CH 100V 97A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 221W (Tc) N-Channel - 100V 97A (Tc) 8.6 mOhm @ 58A, 10V 4V @ 150µA 116nC @ 10V 4476pF @ 50V 10V ±20V
IRFS4410ZPBF
RFQ
VIEW
RFQ
2,928
In-stock
Infineon Technologies MOSFET N-CH 100V 97A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 100V 97A (Tc) 9 mOhm @ 58A, 10V 4V @ 150µA 120nC @ 10V 4820pF @ 50V 10V ±20V
IRFSL4410ZPBF
RFQ
VIEW
RFQ
3,331
In-stock
Infineon Technologies MOSFET N-CH 100V 97A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 230W (Tc) N-Channel - 100V 97A (Tc) 9 mOhm @ 58A, 10V 4V @ 150µA 120nC @ 10V 4820pF @ 50V 10V ±20V
IRFB4410ZGPBF
RFQ
VIEW
RFQ
3,480
In-stock
Infineon Technologies MOSFET N-CH 100V 97A TO-220AB HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 100V 97A (Tc) 9 mOhm @ 58A, 10V 4V @ 150µA 120nC @ 10V 4820pF @ 50V 10V ±20V