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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,680
In-stock
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Infineon Technologies | MOSFET N-CH 25V 81A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 63W (Tc) | N-Channel | 25V | 81A (Tc) | 5.7 mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | 1470pF @ 13V | 4.5V, 10V | ±20V | |||
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VIEW |
1,406
In-stock
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Infineon Technologies | MOSFET N-CH 25V 81A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 63W (Tc) | N-Channel | 25V | 81A (Tc) | 5.7 mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | 1470pF @ 13V | 4.5V, 10V | ±20V | |||
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VIEW |
2,601
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 100V 81A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 210W (Tc) | N-Channel | 100V | 81A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 154nC @ 10V | 3900pF @ 30V | 10V | ±20V | |||
