- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,116
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
3,568
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | - | 100V | 68A (Tc) | 13.9 mOhm @ 15A, 10V | 4V @ 1mA | 59nC @ 10V | 3195pF @ 50V | 10V | ±20V | |||
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VIEW |
3,808
In-stock
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IXYS | 500V POLAR2 HIPERFETS | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 780W (Tc) | N-Channel | - | 500V | 68A (Tc) | 55 mOhm @ 500mA, 10V | 5V @ 8mA | 220nC @ 10V | 13700pF @ 25V | 10V | ±30V | |||
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VIEW |
2,080
In-stock
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STMicroelectronics | POWER MOSFET | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 450W (Tc) | N-Channel | - | 600V | 68A (Tc) | 40 mOhm @ 34A, 10V | 4V @ 250µA | 118nC @ 10V | 5200pF @ 100V | 10V | ±25V | |||
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VIEW |
3,031
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 68A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 100V | 68A (Tc) | 13.9 mOhm @ 15A, 10V | 4V @ 1mA | 59nC @ 10V | 3195pF @ 50V | 10V | ±20V | |||
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VIEW |
3,270
In-stock
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STMicroelectronics | MOSFET N CH 500V 68A TO-247 | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 446W (Tc) | N-Channel | - | 500V | 68A (Tc) | 43 mOhm @ 34A, 10V | 4V @ 250µA | 178nC @ 10V | 5790pF @ 100V | 10V | ±25V | |||
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VIEW |
2,523
In-stock
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STMicroelectronics | MOSFET N-CH 600V 68A TO247 | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 450W (Tc) | N-Channel | - | 600V | 68A (Tc) | 40 mOhm @ 34A, 10V | 4V @ 250µA | 118nC @ 10V | 5200pF @ 100V | 10V | ±25V |