- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,190
In-stock
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Renesas Electronics America | MOSFET N-CH 200V 40A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | - | 200V | 40A (Ta) | 36 mOhm @ 20A, 10V | - | 72nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
|
VIEW |
775
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 40A TO3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 200W (Tc) | N-Channel | - | 500V | 40A (Ta) | 118 mOhm @ 20A, 10V | - | 126nC @ 10V | 5150pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,179
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | TO-220-3 | - | N-Channel | - | 100V | 40A (Ta) | 15 mOhm @ 20A, 10V | 4V @ 1mA | 84nC @ 10V | 4000pF @ 10V | - | - | |||
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VIEW |
3,209
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 40A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 67W (Tc) | N-Channel | - | 60V | 40A (Ta) | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | 1700pF @ 30V | 10V | ±20V | |||
