- Series :
- Part Status :
- Operating Temperature :
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- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,487
In-stock
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ON Semiconductor | MOSFET N-CH 900V 6.5A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TA) | Through Hole | TO-220-3 Full Pack | TO-220-3 Fullpack/TO-220F-3SG | 2W (Ta), 37W (Tc) | N-Channel | - | 900V | 6.5A (Ta) | 2.7 Ohm @ 3.25A, 10V | - | 44nC @ 10V | 850pF @ 30V | 10V | ±30V | |||
|
VIEW |
3,446
In-stock
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,522
In-stock
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 32 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,051
In-stock
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,641
In-stock
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Infineon Technologies | MOSFET N-CH 20V 6.5A MICRO-8 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.8W (Ta) | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | |||
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VIEW |
3,300
In-stock
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Infineon Technologies | MOSFET N-CH 20V 6.5A TSOP-6 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 2W (Ta) | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,662
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 6.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 450V | 6.5A (Ta) | 1.2 Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,750
In-stock
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 32 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
759
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V 6.5A TO220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 800V | 6.5A (Ta) | 950 mOhm @ 3.3A, 10V | 4V @ 280µA | 13nC @ 10V | 700pF @ 300V | 10V | ±20V | |||
