Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF8252PBF
RFQ
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RFQ
3,300
In-stock
Infineon Technologies MOSFET N-CH 25V 25A 8-SO HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 25V 25A (Ta) 2.7 mOhm @ 25A, 10V 2.35V @ 100µA 53nC @ 4.5V 5305pF @ 13V 4.5V, 10V ±20V
TK25E06K3,S1X(S
RFQ
VIEW
RFQ
2,908
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 25A TO-220AB U-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220-3 60W (Tc) N-Channel - 60V 25A (Ta) 18 mOhm @ 12.5A, 10V - 29nC @ 10V - - -
RJK5015DPM-00#T1
RFQ
VIEW
RFQ
2,137
In-stock
Renesas Electronics America MOSFET N-CH 500V 25A TO3PFM - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3PFM, SC-93-3 TO-3PFM 60W (Tc) N-Channel - 500V 25A (Ta) 240 mOhm @ 12.5A, 10V - 66nC @ 10V 2600pF @ 25V 10V ±30V
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RFQ
VIEW
RFQ
876
In-stock
Renesas Electronics America MOSFET N-CHANNEL 500V 25A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 150W (Ta) N-Channel - 500V 25A (Ta) 240 mOhm @ 12.5A, 10V - 66nC @ 10V 2600pF @ 25V 10V ±30V
TK25E60X5,S1X
RFQ
VIEW
RFQ
1,389
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-220AB DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 180W (Tc) N-Channel - 600V 25A (Ta) 140 mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60nC @ 10V 2400pF @ 300V 10V ±30V
TK25N60X,S1F
RFQ
VIEW
RFQ
1,527
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 180W (Tc) N-Channel - 600V 25A (Ta) 125 mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40nC @ 10V 2400pF @ 300V 10V ±30V
TK25A60X5,S5X
RFQ
VIEW
RFQ
719
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-220SIS DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 25A (Ta) 140 mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60nC @ 10V 2400pF @ 300V 10V ±30V
TK25N60X5,S1F
RFQ
VIEW
RFQ
2,939
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 180W (Tc) N-Channel - 600V 25A (Ta) 140 mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60nC @ 10V 2400pF @ 300V 10V ±30V
TK25A60X,S5X
RFQ
VIEW
RFQ
846
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-3PN DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 25A (Ta) 125 mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40nC @ 10V 2400pF @ 300V 10V ±30V
TK25E60X,S1X
RFQ
VIEW
RFQ
1,531
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-220AB DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 180W (Tc) N-Channel - 600V 25A (Ta) 125 mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40nC @ 10V 2400pF @ 300V 10V ±30V