- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,300
In-stock
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Infineon Technologies | MOSFET N-CH 25V 25A 8-SO | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 25V | 25A (Ta) | 2.7 mOhm @ 25A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 5305pF @ 13V | 4.5V, 10V | ±20V | |||
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VIEW |
2,908
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 25A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 60W (Tc) | N-Channel | - | 60V | 25A (Ta) | 18 mOhm @ 12.5A, 10V | - | 29nC @ 10V | - | - | - | |||
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VIEW |
2,137
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 25A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | - | 500V | 25A (Ta) | 240 mOhm @ 12.5A, 10V | - | 66nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
|
VIEW |
876
In-stock
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Renesas Electronics America | MOSFET N-CHANNEL 500V 25A TO3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 150W (Ta) | N-Channel | - | 500V | 25A (Ta) | 240 mOhm @ 12.5A, 10V | - | 66nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
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VIEW |
1,389
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,527
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
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VIEW |
719
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220SIS | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
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VIEW |
2,939
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
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VIEW |
846
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-3PN | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
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VIEW |
1,531
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V |