- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
670
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 9A (Ta) | 830 mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,732
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 9A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.5W (Ta), 28.5W (Tj) | N-Channel | 60V | 9A (Ta) | 170 mOhm @ 4.5A, 5V | 2V @ 250µA | 10nC @ 5V | 275pF @ 25V | 5V | ±15V | |||
|
VIEW |
3,285
In-stock
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ON Semiconductor | MOSFET N-CH 100V 9A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK/TP | 1W (Ta), 19W (Tc) | N-Channel | 100V | 9A (Ta) | 225 mOhm @ 3A, 10V | 2.6V @ 1mA | 9.8nC @ 10V | 490pF @ 20V | 4V, 10V | ±20V | |||
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|
VIEW |
1,982
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 9A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | 450V | 9A (Ta) | 770 mOhm @ 4.5A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,909
In-stock
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Infineon Technologies | MOSFET N-CH 500V 9A TO-220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 83W (Tc) | N-Channel | 500V | 9A (Ta) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 4nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,301
In-stock
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ON Semiconductor | MOSFET N-CH 60V 9A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 28.5W (Tj) | N-Channel | 60V | 9A (Ta) | 170 mOhm @ 4.5A, 5V | 2V @ 250µA | 10nC @ 5V | 275pF @ 25V | 5V | ±15V | |||
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|
VIEW |
3,427
In-stock
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ON Semiconductor | MOSFET N-CH 60V 9A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.5W (Ta), 28.5W (Tj) | N-Channel | 60V | 9A (Ta) | 170 mOhm @ 4.5A, 5V | 2V @ 250µA | 10nC @ 5V | 275pF @ 25V | 5V | ±15V | |||
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|
VIEW |
3,945
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 9A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 28.5W (Tj) | N-Channel | 60V | 9A (Ta) | 170 mOhm @ 4.5A, 5V | 2V @ 250µA | 10nC @ 5V | 275pF @ 25V | 5V | ±15V | |||
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|
VIEW |
2,890
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 9A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 28.8W (Tj) | N-Channel | 60V | 9A (Ta) | 150 mOhm @ 4.5A, 10V | 4V @ 250µA | 15nC @ 10V | 280pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,970
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 9A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.5W (Ta), 28.8W (Tj) | N-Channel | 60V | 9A (Ta) | 150 mOhm @ 4.5A, 10V | 4V @ 250µA | 15nC @ 10V | 280pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,745
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 9A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 40V | 9A (Ta) | 17 mOhm @ 9A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2000pF @ 20V | 4.5V, 10V | ±20V | |||
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|
VIEW |
688
In-stock
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Infineon Technologies | MOSFET N-CH 40V 9A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 40V | 9A (Ta) | 17 mOhm @ 9A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2000pF @ 20V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,628
In-stock
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ON Semiconductor | MOSFET N-CH 1500V 9A TO3PF-3 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | - | TO-3P-3 Full Pack | TO-3PF-3 | 3W (Ta), 78W (Tc) | N-Channel | 1500V | 9A (Ta) | 3 Ohm @ 3A, 10V | 4V @ 1mA | 114nC @ 10V | 2025pF @ 30V | 10V | ±30V | |||
|
VIEW |
3,677
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | 900V | 9A (Ta) | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,303
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 250W (Tc) | N-Channel | 900V | 9A (Ta) | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
