- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
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25 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,689
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 20A | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P-3L | 2.5W (Ta), 170W (Tc) | N-Channel | - | 500V | 20A (Ta) | 430 mOhm @ 8A, 10V | - | 46.6nC @ 10V | 1200pF @ 30V | 10V | ±30V | |||
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|
VIEW |
2,110
In-stock
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ON Semiconductor | MOSFET N-CH 100V 20A | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3SG | 2W (Ta), 25W (Tc) | N-Channel | - | 100V | 20A (Ta) | 60 mOhm @ 10A, 10V | - | 44nC @ 10V | 2150pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
2,724
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 20A TO-220SIS | π-MOSVII | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 250V | 20A (Ta) | 100 mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | 2550pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,186
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,188
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
681
In-stock
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ON Semiconductor | MOSFET N-CH 60V 20A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.36W (Ta), 60W (Tj) | N-Channel | - | 60V | 20A (Ta) | 48 mOhm @ 10A, 5V | 2V @ 250µA | 32nC @ 5V | 990pF @ 25V | 5V | ±15V | |||
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|
VIEW |
1,203
In-stock
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ON Semiconductor | MOSFET N-CH 60V 20A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.88W (Ta), 60W (Tj) | N-Channel | - | 60V | 20A (Ta) | 46 mOhm @ 10A, 10V | 4V @ 250µA | 30nC @ 10V | 1015pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,717
In-stock
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ON Semiconductor | MOSFET N-CH 30V 20A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.75W (Ta), 74W (Tc) | N-Channel | - | 30V | 20A (Ta) | 27 mOhm @ 10A, 5V | 2V @ 250µA | 18.9nC @ 10V | 1260pF @ 25V | 4V, 5V | ±20V | |||
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|
VIEW |
2,877
In-stock
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Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,374
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 20A TO3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 120W (Tc) | N-Channel | - | 500V | 20A (Ta) | 270 mOhm @ 10A, 10V | - | - | 3050pF @ 10V | 10V | ±30V | |||
|
VIEW |
1,796
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,554
In-stock
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ON Semiconductor | MOSFET N-CH 60V 20A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.36W (Ta), 60W (Tj) | N-Channel | - | 60V | 20A (Ta) | 48 mOhm @ 10A, 5V | 2V @ 250µA | 32nC @ 5V | 990pF @ 25V | 5V | ±15V | |||
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|
VIEW |
2,678
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 20A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.36W (Ta), 60W (Tj) | N-Channel | - | 60V | 20A (Ta) | 48 mOhm @ 10A, 5V | 2V @ 250µA | 32nC @ 5V | 990pF @ 25V | 5V | ±15V | |||
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|
VIEW |
3,975
In-stock
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ON Semiconductor | MOSFET N-CH 60V 20A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.88W (Ta), 60W (Tj) | N-Channel | - | 60V | 20A (Ta) | 46 mOhm @ 10A, 10V | 4V @ 250µA | 30nC @ 10V | 1015pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,105
In-stock
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ON Semiconductor | MOSFET N-CH 60V 20A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.88W (Ta), 60W (Tj) | N-Channel | - | 60V | 20A (Ta) | 46 mOhm @ 10A, 10V | 4V @ 250µA | 30nC @ 10V | 1015pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,608
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 20A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.75W (Ta), 74W (Tc) | N-Channel | - | 30V | 20A (Ta) | 27 mOhm @ 10A, 5V | 2V @ 250µA | 18.9nC @ 10V | 1260pF @ 25V | 4V, 5V | ±20V | |||
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|
VIEW |
3,689
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 20A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.75W (Ta), 74W (Tc) | N-Channel | - | 30V | 20A (Ta) | 27 mOhm @ 10A, 5V | 2V @ 250µA | 18.9nC @ 10V | 1260pF @ 25V | 4V, 5V | ±20V | |||
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|
VIEW |
3,760
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 20A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.75W (Ta), 74W (Tc) | N-Channel | - | 30V | 20A (Ta) | 27 mOhm @ 10A, 5V | 2V @ 250µA | 18.9nC @ 10V | 1260pF @ 25V | 4V, 5V | ±20V | |||
|
VIEW |
807
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,649
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | |||
|
VIEW |
1,720
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-3PN | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 190W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | |||
|
VIEW |
1,052
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,618
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,148
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,532
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 20A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 155°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 20A (Ta) | 4 mOhm @ 20A, 10V | 2.32V @ 250µA | 51nC @ 4.5V | 4310pF @ 15V | 4.5V, 10V | ±20V | |||
