Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFX260N17T
RFQ
VIEW
RFQ
973
In-stock
IXYS MOSFET N-CH 170V 260A PLUS247 GigaMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1670W (Tc) N-Channel - 170V 260A (Tc) 6.5 mOhm @ 60A, 10V 5V @ 8mA 400nC @ 10V 24000pF @ 25V 10V ±20V
IXFK260N17T
RFQ
VIEW
RFQ
2,950
In-stock
IXYS MOSFET N-CH 170V 260A TO-264 GigaMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1670W (Tc) N-Channel - 170V 260A (Tc) 6.5 mOhm @ 60A, 10V 5V @ 8mA 400nC @ 10V 24000pF @ 25V 10V ±20V
IXTH260N055T2
RFQ
VIEW
RFQ
2,781
In-stock
IXYS MOSFET N-CH 55V 260A TO-247 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 55V 260A (Tc) 3.3 mOhm @ 50A, 10V 4V @ 250µA 140nC @ 10V 10800pF @ 25V 10V ±20V
IRFBL3703
RFQ
VIEW
RFQ
3,821
In-stock
Infineon Technologies MOSFET N-CH 30V 260A SUPER D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount SUPER D2-PAK SUPER D2-PAK 3.8W (Ta), 300W (Tc) N-Channel - 30V 260A (Tc) 2.5 mOhm @ 76A, 10V 4V @ 250µA 209nC @ 10V 8250pF @ 25V 7V, 10V ±20V
IXTA260N055T2-7
RFQ
VIEW
RFQ
1,545
In-stock
IXYS MOSFET N-CH 55V 260A TO-263 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB TO-263-7 (IXTA..7) 480W (Tc) N-Channel - 55V 260A (Tc) 3.3 mOhm @ 50A, 10V 4V @ 250µA 140nC @ 10V 10800pF @ 25V 10V ±20V
IXTP260N055T2
RFQ
VIEW
RFQ
696
In-stock
IXYS MOSFET N-CH 55V 260A TO-220 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 480W (Tc) N-Channel - 55V 260A (Tc) 3.3 mOhm @ 50A, 10V 4V @ 250µA 140nC @ 10V 10800pF @ 25V 10V ±20V
IRL3713SPBF
RFQ
VIEW
RFQ
3,841
In-stock
Infineon Technologies MOSFET N-CH 30V 260A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 30V 260A (Tc) 3 mOhm @ 38A, 10V 2.5V @ 250µA 110nC @ 4.5V 5890pF @ 15V 4.5V, 10V ±20V
IRL3713PBF
RFQ
VIEW
RFQ
2,822
In-stock
Infineon Technologies MOSFET N-CH 30V 260A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 30V 260A (Tc) 3 mOhm @ 38A, 10V 2.5V @ 250µA 110nC @ 4.5V 5890pF @ 15V 4.5V, 10V ±20V
IXFN320N17T2
RFQ
VIEW
RFQ
3,717
In-stock
IXYS MOSFET N-CH 170V 260A SOT227 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 1070W (Tc) N-Channel - 170V 260A (Tc) 5.2 mOhm @ 60A, 10V 5V @ 8mA 640nC @ 10V 45000pF @ 25V 10V ±20V
IRLB3813PBF
RFQ
VIEW
RFQ
2,944
In-stock
Infineon Technologies MOSFET N-CH 30V 260A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 30V 260A (Tc) 1.95 mOhm @ 60A, 10V 2.35V @ 150µA 86nC @ 4.5V 8420pF @ 15V 4.5V, 10V ±20V