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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	SI4420DYPBF	RFQ VIEW	PDF RFQ	3,677 In-stock	Infineon Technologies	MOSFET N-CH 30V 12.5A 8-SOIC		HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	30V	12.5A (Ta)	9 mOhm @ 12.5A, 10V	1V @ 250µA	78nC @ 10V	2240pF @ 15V	4.5V, 10V	±20V
	SI4420DY	RFQ VIEW	PDF RFQ	2,704 In-stock	Infineon Technologies	MOSFET N-CH 30V 12.5A 8-SOIC		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	30V	12.5A (Ta)	9 mOhm @ 12.5A, 10V	1V @ 250µA	78nC @ 10V	2240pF @ 15V	4.5V, 10V	±20V
	TK13A55DA(STA4,QM)	RFQ VIEW	PDF RFQ	1,213 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 12.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	550V	12.5A (Ta)	480 mOhm @ 6.3A, 10V	4V @ 1mA	38nC @ 10V	1800pF @ 25V	10V	±30V
	TK13A50DA(STA4,Q,M	RFQ VIEW	PDF RFQ	896 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 12.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	500V	12.5A (Ta)	470 mOhm @ 6.3A, 10V	4V @ 1mA	28nC @ 10V	1550pF @ 25V	10V	±30V

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