Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,177
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ON Semiconductor MOSFET N-CH 250V 11.4A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 73W (Tc) N-Channel - 250V 11.4A (Tc) 270 mOhm @ 5.7A, 10V 4V @ 250µA 53.5nC @ 10V 1080pF @ 25V 10V ±30V
FQA11N90
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2,664
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ON Semiconductor MOSFET N-CH 900V 11.4A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 300W (Tc) N-Channel - 900V 11.4A (Tc) 960 mOhm @ 5.7A, 10V 5V @ 250µA 94nC @ 10V 3500pF @ 25V 10V ±30V
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625
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ON Semiconductor MOSFET N-CH 300V 11.4A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 90W (Tc) N-Channel - 300V 11.4A (Tc) 290 mOhm @ 5.7A, 10V 5V @ 250µA 40nC @ 10V 1360pF @ 25V 10V ±30V
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836
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ON Semiconductor MOSFET N-CH 400V 11.4A I2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3.13W (Ta), 147W (Tc) N-Channel - 400V 11.4A (Tc) 480 mOhm @ 5.7A, 10V 5V @ 250µA 35nC @ 10V 1400pF @ 25V 10V ±30V
FQP11N40
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1,549
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ON Semiconductor MOSFET N-CH 400V 11.4A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 147W (Tc) N-Channel - 400V 11.4A (Tc) 480 mOhm @ 5.7A, 10V 5V @ 250µA 35nC @ 10V 1400pF @ 25V 10V ±30V
IPP65R310CFDAAKSA1
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1,318
In-stock
Infineon Technologies MOSFET N-CH 650V TO-220-3 Automotive, AEC-Q101, CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 104.2W (Tc) N-Channel - 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1110pF @ 100V 10V ±20V
IPW65R310CFDFKSA1
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1,164
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Infineon Technologies MOSFET N-CH 650V 11.4A TO247 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 104.2W (Tc) N-Channel - 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1100pF @ 100V 10V ±20V
FQA11N90-F109
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1,946
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ON Semiconductor MOSFET N-CH 900V 11.4A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 300W (Tc) N-Channel - 900V 11.4A (Tc) 960 mOhm @ 5.7A, 10V 5V @ 250µA 94nC @ 10V 3500pF @ 25V 10V ±30V
IPI65R310CFDXKSA1
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3,230
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Infineon Technologies MOSFET N-CH 650V 11.4A TO262 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 104.2W (Tc) N-Channel - 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1100pF @ 100V 10V ±20V
IPA65R310CFDXKSA1
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2,155
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Infineon Technologies MOSFET N-CH 650V 11.4A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 32W (Tc) N-Channel - 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1100pF @ 100V 10V ±20V
IPP65R310CFDXKSA1
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RFQ
1,628
In-stock
Infineon Technologies MOSFET N-CH 650V 11.4A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 104.2W (Tc) N-Channel - 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1100pF @ 100V 10V ±20V