Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFR3103
RFQ
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RFQ
1,773
In-stock
Infineon Technologies MOSFET N-CH 400V 1.7A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) N-Channel 400V 1.7A (Ta) 3.6 Ohm @ 1A, 10V 4V @ 250µA 12nC @ 10V 170pF @ 25V 10V ±20V
IRLD014
RFQ
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RFQ
2,875
In-stock
Vishay Siliconix MOSFET N-CH 60V 1.7A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 60V 1.7A (Ta) 200 mOhm @ 1A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 4V, 5V ±10V
IRFD014
RFQ
VIEW
RFQ
1,834
In-stock
Vishay Siliconix MOSFET N-CH 60V 1.7A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 60V 1.7A (Ta) 200 mOhm @ 1A, 10V 4V @ 250µA 11nC @ 10V 310pF @ 25V 10V ±20V
IRFD014PBF
RFQ
VIEW
RFQ
1,349
In-stock
Vishay Siliconix MOSFET N-CH 60V 1.7A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 60V 1.7A (Ta) 200 mOhm @ 1A, 10V 4V @ 250µA 11nC @ 10V 310pF @ 25V 10V ±20V
IRLD014PBF
RFQ
VIEW
RFQ
623
In-stock
Vishay Siliconix MOSFET N-CH 60V 1.7A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 60V 1.7A (Ta) 200 mOhm @ 1A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 4V, 5V ±10V