Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFB110N60P3
RFQ
VIEW
RFQ
2,740
In-stock
IXYS MOSFET N-CH 600V 110A PLUS264 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1890W (Tc) N-Channel - 600V 110A (Tc) 56 mOhm @ 55A, 10V 5V @ 8mA 245nC @ 10V 18000pF @ 25V 10V ±30V
IXFB210N30P3
RFQ
VIEW
RFQ
2,662
In-stock
IXYS MOSFET N-CH 300V 210A PLUS264 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-264-3, TO-264AA PLUS264™ 1890W (Tc) N-Channel - 300V 210A (Tc) 14.5 mOhm @ 105A, 10V 5V @ 8mA 268nC @ 10V 16200pF @ 25V 10V ±20V
IXFB120N50P2
RFQ
VIEW
RFQ
2,543
In-stock
IXYS MOSFET N-CH 500V 120A PLUS264 HiPerFET™, PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1890W (Tc) N-Channel - 500V 120A (Tc) 43 mOhm @ 500mA, 10V 5V @ 8mA 300nC @ 10V 19000pF @ 25V 10V ±30V
IXFB100N50P
RFQ
VIEW
RFQ
3,698
In-stock
IXYS MOSFET N-CH 500V 100A PLUS264 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) - Through Hole TO-264-3, TO-264AA PLUS264™ 1890W (Tc) N-Channel - 500V 100A (Tc) 49 mOhm @ 50A, 10V 5V @ 8mA 240nC @ 10V 20000pF @ 25V 10V ±30V
IXFB132N50P3
RFQ
VIEW
RFQ
1,004
In-stock
IXYS MOSFET N-CH 500V 132A PLUS264 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1890W (Tc) N-Channel - 500V 132A (Tc) 39 mOhm @ 66A, 10V 5V @ 8mA 250nC @ 10V 18600pF @ 25V 10V ±30V