- Part Status :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
902
In-stock
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V | |||
|
VIEW |
881
In-stock
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ON Semiconductor | MOSFET N-CH 500V 5.5A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 98W (Tc) | N-Channel | - | 500V | 5.5A (Tc) | 1.3 Ohm @ 2.8A, 10V | 5V @ 250µA | 22nC @ 10V | 790pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,157
In-stock
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ON Semiconductor | MOSFET N-CH 400V 7A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 98W (Tc) | N-Channel | - | 400V | 7A (Tc) | 800 mOhm @ 3.5A, 10V | 5V @ 250µA | 22nC @ 10V | 780pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,946
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 5.5A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 98W (Tc) | N-Channel | - | 500V | 5.5A (Tc) | 1.2 Ohm @ 2.8A, 10V | 4V @ 250µA | 25nC @ 10V | 700pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,601
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 120V 60A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 98W (Tc) | N-Channel | - | 120V | 60A (Tc) | 13.8 mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | 2000pF @ 60V | 10V | ±20V | |||
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|
VIEW |
803
In-stock
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ON Semiconductor | MOSFET N-CH 300V 9A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 98W (Tc) | N-Channel | - | 300V | 9A (Tc) | 450 mOhm @ 4.5A, 10V | 5V @ 250µA | 22nC @ 10V | 750pF @ 25V | 10V | ±30V | |||
