- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,821
In-stock
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Infineon Technologies | MOSFET N-CH 30V 260A SUPER D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Surface Mount | SUPER D2-PAK | SUPER D2-PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 30V | 260A (Tc) | 2.5 mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | 8250pF @ 25V | 7V, 10V | ±20V | |||
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VIEW |
760
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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VIEW |
1,912
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
