Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,051
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Vishay Siliconix MOSFET N-CH 600V 18A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 179W (Tc) N-Channel - 600V 18A (Tc) 202 mOhm @ 9A, 10V 4V @ 250µA 92nC @ 10V 1640pF @ 100V 10V ±30V
IPI120N08S404AKSA1
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3,874
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Infineon Technologies MOSFET N-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 179W (Tc) N-Channel - 80V 120A (Tc) 4.4 mOhm @ 100A, 10V 4V @ 120µA 95nC @ 10V 6450pF @ 25V 10V ±20V
IPP120N08S404AKSA1
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RFQ
1,563
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Infineon Technologies MOSFET N-CH TO220-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 179W (Tc) N-Channel - 80V 120A (Tc) 4.4 mOhm @ 100A, 10V 4V @ 120µA 95nC @ 10V 6450pF @ 25V 10V ±20V
SIHG20N50E-GE3
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838
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Vishay Siliconix MOSFET N-CH 500V 19A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 179W (Tc) N-Channel - 500V 19A (Tc) 184 mOhm @ 10A, 10V 4V @ 250µA 92nC @ 10V 1640pF @ 100V 10V ±30V
SIHP20N50E-GE3
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RFQ
1,446
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Vishay Siliconix MOSFET N-CH 500V 19A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 179W (Tc) N-Channel - 500V 19A (Tc) 184 mOhm @ 10A, 10V 4V @ 250µA 92nC @ 10V 1640pF @ 100V 10V ±30V
SIHB22N60AE-GE3
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RFQ
1,338
In-stock
Vishay Siliconix MOSFET N-CH 600V 20A D2PAK E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 179W (Tc) N-Channel - 600V 20A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 96nC @ 10V 1451pF @ 100V 10V ±30V
SIHP11N80E-GE3
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1,094
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Vishay Siliconix MOSFET N-CH 800V 12A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 179W (Tc) N-Channel - 800V 12A (Tc) 440 mOhm @ 5.5A, 10V 4V @ 250µA 88nC @ 10V 1670pF @ 100V 10V ±30V
LSIC1MO120E0080
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2,705
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Littelfuse Inc. MOSFET SIC 1200V 25A TO-247-3L - Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C Through Hole TO-247-3 TO-247-3 179W (Tc) N-Channel - 1200V 39A (Tc) 100 mOhm @ 20A, 20V 4V @ 10mA 95nC @ 20V 1825pF @ 800V 20V +22V, -6V
SIHG22N60AE-GE3
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RFQ
2,608
In-stock
Vishay Siliconix MOSFET N-CH 600V 20A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 179W (Tc) N-Channel - 600V 20A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 96nC @ 10V 1451pF @ 100V 10V ±30V
SIHP22N60AE-GE3
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RFQ
2,478
In-stock
Vishay Siliconix MOSFET N-CH 600V 20A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 179W (Tc) N-Channel - 600V 20A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 96nC @ 10V 1451pF @ 100V 10V ±30V