Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF135B203
RFQ
VIEW
RFQ
3,723
In-stock
Infineon Technologies MOSFET NCH 135V 129A TO220 StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 441W (Tc) N-Channel - 135V 129A (Tc) 8.4 mOhm @ 77A, 10V 4V @ 250µA 270nC @ 10V 9700pF @ 50V 10V ±20V
IRF100B201
RFQ
VIEW
RFQ
3,065
In-stock
Infineon Technologies MOSFET N-CH 100V 192A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 441W (Tc) N-Channel - 100V 192A (Tc) 4.2 mOhm @ 115A, 10V 4V @ 250µA 255nC @ 10V 9500pF @ 50V 10V ±20V