- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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19 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,349
In-stock
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Infineon Technologies | MOSFET N-CH 20V 2.4A MICRO8 | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.3W (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 2.4A (Ta) | 135 mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
VIEW |
2,565
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,846
In-stock
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Infineon Technologies | MOSFET N-CH 20V 2.4A MICRO-8 | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.3W (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 2.4A (Ta) | 135 mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
VIEW |
2,696
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 100V | 1A (Ta) | 540 mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 4V, 5V | ±10V | |||
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|
VIEW |
3,229
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 4V, 5V | ±10V | |||
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|
VIEW |
2,875
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | |||
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|
VIEW |
2,811
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
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|
VIEW |
2,286
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,086
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 100V | 1A (Ta) | 540 mOhm @ 600mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,483
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 100V | 1A (Ta) | 540 mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 4V, 5V | ±10V | |||
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|
VIEW |
1,834
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 10V | 4V @ 250µA | 11nC @ 10V | 310pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,349
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 10V | 4V @ 250µA | 11nC @ 10V | 310pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,662
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 100V | 1A (Ta) | 540 mOhm @ 600mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,078
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,880
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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|
VIEW |
623
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | |||
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|
VIEW |
1,209
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
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|
VIEW |
770
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
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|
VIEW |
750
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | - | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 4V, 5V | ±10V | |||
