Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFS7437-7PPBF
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2,855
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Infineon Technologies MOSFET N CH 40V 195A D2PAK-7PIN HEXFET®, StrongIRFET™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK (7-Lead) 231W (Tc) N-Channel - 40V 195A (Tc) 1.4 mOhm @ 100A, 10V 3.9V @ 150µA 225nC @ 10V 7437pF @ 25V 6V, 10V ±20V
AUIRLS3034-7P
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1,137
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Infineon Technologies MOSFET N-CH 40V 240A D2PAK-7P HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK (7-Lead) 380W (Tc) N-Channel - 40V 240A (Tc) 1.4 mOhm @ 200A, 10V 2.5V @ 250µA 180nC @ 4.5V 10990pF @ 40V 4.5V, 10V ±20V
C3M0280090J
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3,456
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Cree/Wolfspeed MOSFET N-CH 900V 11A C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 50W (Tc) N-Channel - 900V 11A (Tc) 360 mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V 15V +18V, -8V
C3M0120100J
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927
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Cree/Wolfspeed MOSFET N-CH 1000V 22A D2PAK-7 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 83W (Tc) N-Channel - 1000V 22A (Tc) 155 mOhm @ 15A, 15V 3.5V @ 3mA 21.5nC @ 15V 350pF @ 600V 15V +15V, -4V
C3M0065100J
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1,119
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Cree/Wolfspeed MOSFET N-CH 1000V 35A D2PAK-7 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 113.5W (Tc) N-Channel - 1000V 35A (Tc) 78 mOhm @ 20A, 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V 15V +15V, -4V
C3M0065090J
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3,614
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Cree/Wolfspeed MOSFET N-CH 900V 35A D2PAK-7 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 113W (Tc) N-Channel - 900V 35A (Tc) 78 mOhm @ 20A, 15V 2.1V @ 5mA 30nC @ 15V 660pF @ 600V 15V +19V, -8V
C3M0120090J
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2,716
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Cree/Wolfspeed MOSFET N-CH 900V 22A C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 83W (Tc) N-Channel - 900V 22A (Tc) 155 mOhm @ 15A, 15V 3.5V @ 3mA 17.3nC @ 15V 350pF @ 600V 15V +18V, -8V