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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK50E06K3A,S1X(S	RFQ VIEW	PDF RFQ	2,901 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 50A TO-220AB		U-MOSIV	Active	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-220-3	TO-220-3	-	N-Channel	60V	50A (Tc)	8.5 mOhm @ 25A, 10V	-	54nC @ 10V	-	-	-
	TK25E06K3,S1X(S	RFQ VIEW	PDF RFQ	2,908 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 25A TO-220AB		U-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220-3	60W (Tc)	N-Channel	60V	25A (Ta)	18 mOhm @ 12.5A, 10V	-	29nC @ 10V	-	-	-
	TK8A10K3,S5Q	RFQ VIEW	PDF RFQ	659 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 8A TO-220SIS		U-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	18W (Tc)	N-Channel	100V	8A (Ta)	120 mOhm @ 4A, 10V	4V @ 1mA	12.9nC @ 10V	530pF @ 10V	10V	±20V
	TK40E10K3,S1X(S	RFQ VIEW	PDF RFQ	1,179 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 40A TO-220AB		U-MOSIV	Active	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-220-3	TO-220-3	-	N-Channel	100V	40A (Ta)	15 mOhm @ 20A, 10V	4V @ 1mA	84nC @ 10V	4000pF @ 10V	-	-
	TK18E10K3,S1X(S	RFQ VIEW	PDF RFQ	3,127 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 18A TO-220AB		U-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220-3	-	N-Channel	100V	18A (Ta)	42 mOhm @ 9A, 10V	-	33nC @ 10V	-	-	-

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