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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	62-0136PBF	RFQ VIEW	PDF RFQ	2,484 In-stock	Infineon Technologies	MOSFET N-CH 30V 19A 8-SOIC		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TA)	Surface Mount	-	-	2.5W	N-Channel	-	30V	19A (Ta)	4.5 mOhm @ 19A, 10V	2.25V @ 250µA	44nC @ 4.5V	3710pF @ 15V	10V	±20V
	STFU6N65	RFQ VIEW	PDF RFQ	2,738 In-stock	STMicroelectronics	N-CHANNEL 650 V, 1.2 OHM TYP., 4		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TA)	Through Hole	TO-220-3 Full Pack	TO-220FP	620mW (Ta), 77W (Tc)	N-Channel	-	650V	4A (Tc)	2.7 Ohm @ 2A, 10V	4V @ 250µA	-	463pF @ 25V	10V	±30V
	SIHD12N50E-GE3	RFQ VIEW	PDF RFQ	2,694 In-stock	Vishay Siliconix	MOSFET N-CHAN 500V DPAK		E	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TA)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	114W (Tc)	N-Channel	-	550V	10.5A (Tc)	380 mOhm @ 6A, 10V	4V @ 250µA	50nC @ 10V	886pF @ 100V	10V	±30V
	SIHG23N60E-GE3	RFQ VIEW	PDF RFQ	1,617 In-stock	Vishay Siliconix	MOSFET N-CH 600V 23A TO247AC		E	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TA)	Through Hole	TO-247-3	TO-247AC	227W (Tc)	N-Channel	-	600V	23A (Tc)	158 mOhm @ 12A, 10V	4V @ 250µA	95nC @ 10V	2418pF @ 100V	10V	±30V

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