Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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CMF20120D
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VIEW
RFQ
783
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 42A TO-247-3 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247-3 TO-247-3 215W (Tc) N-Channel - 1200V 42A (Tc) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V
Default Photo
RFQ
VIEW
RFQ
3,389
In-stock
Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 65W (Tc) N-Channel - 1700V 5A (Tc) 1.25 Ohm @ 2.5A, 20V 3.2V @ 500µA 21nC @ 20V 249pF @ 1000V 20V +25V, -10V
Default Photo
RFQ
VIEW
RFQ
2,631
In-stock
Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 176W (Tc) N-Channel - 700V 35A (Tc) 145 mOhm @ 10A, 20V 2.5V @ 1mA 67nC @ 20V 1035pF @ 700V 20V +25V, -10V
Default Photo
RFQ
VIEW
RFQ
2,985
In-stock
Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 556W (Tc) N-Channel - 700V 110A (Tc) 45 mOhm @ 60A, 20V 2.4V @ 1mA 220nC @ 20V 3950pF @ 700V 20V +25V, -10V
C2M0045170D
RFQ
VIEW
RFQ
1,223
In-stock
Cree/Wolfspeed MOSFET NCH 1.7KV 72A TO247 C2M™ Active Tube SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 520W (Tc) N-Channel - 1700V 72A (Tc) 70 mOhm @ 50A, 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1kV 20V +25V, -10V
C2M0025120D
RFQ
VIEW
RFQ
603
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 90A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 463W (Tc) N-Channel - 1200V 90A (Tc) 34 mOhm @ 50A, 20V 2.4V @ 10mA 161nC @ 20V 2788pF @ 1000V 20V +25V, -10V
SCT3030KLGC11
RFQ
VIEW
RFQ
1,152
In-stock
Rohm Semiconductor MOSFET NCH 1.2KV 72A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 339W (Tc) N-Channel - 1200V 72A (Tc) 39 mOhm @ 27A, 18V 5.6V @ 13.3mA 131nC @ 18V 2222pF @ 800V 18V +22V, -4V
SCT3022ALGC11
RFQ
VIEW
RFQ
1,738
In-stock
Rohm Semiconductor MOSFET NCH 650V 93A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 339W (Tc) N-Channel - 650V 93A (Tc) 28.6 mOhm @ 36A, 18V 5.6V @ 18.2mA 133nC @ 18V 2208pF @ 500V 18V +22V, -4V
C2M0040120D
RFQ
VIEW
RFQ
3,736
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 60A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 330W (Tc) N-Channel - 1200V 60A (Tc) 52 mOhm @ 40A, 20V 2.8V @ 10mA 115nC @ 20V 1893pF @ 1000V 20V +25V, -10V
SCT2080KEC
RFQ
VIEW
RFQ
2,630
In-stock
Rohm Semiconductor MOSFET N-CH 1200V 40A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 262W (Tc) N-Channel - 1200V 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 2080pF @ 800V 18V +22V, -6V
SCT3040KLGC11
RFQ
VIEW
RFQ
2,729
In-stock
Rohm Semiconductor MOSFET NCH 1.2KV 55A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 262W (Tc) N-Channel - 1200V 55A (Tc) 52 mOhm @ 20A, 18V 5.6V @ 10mA 107nC @ 18V 1337pF @ 800V 18V +22V, -4V
SCT3030ALGC11
RFQ
VIEW
RFQ
3,384
In-stock
Rohm Semiconductor MOSFET NCH 650V 70A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 262W (Tc) N-Channel - 650V 70A (Tc) 39 mOhm @ 27A, 18V 5.6V @ 13.3mA 104nC @ 18V 1526pF @ 500V 18V +22V, -4V
SCT2120AFC
RFQ
VIEW
RFQ
1,274
In-stock
Rohm Semiconductor MOSFET N-CH 650V 29A TO-220AB - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-220-3 TO-220AB 165W (Tc) N-Channel - 650V 29A (Tc) 156 mOhm @ 10A, 18V 4V @ 3.3mA 61nC @ 18V 1200pF @ 500V 18V +22V, -6V
SCT2280KEC
RFQ
VIEW
RFQ
2,045
In-stock
Rohm Semiconductor MOSFET N-CH 1200V 14A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 108W (Tc) N-Channel - 1200V 14A (Tc) 364 mOhm @ 4A, 18V 4V @ 1.4mA 36nC @ 18V 667pF @ 800V 18V +22V, -6V
SCT3080KLGC11
RFQ
VIEW
RFQ
2,545
In-stock
Rohm Semiconductor MOSFET NCH 1.2KV 31A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 165W (Tc) N-Channel - 1200V 31A (Tc) 104 mOhm @ 10A, 18V 5.6V @ 5mA 60nC @ 18V 785pF @ 800V 18V +22V, -4V
C3M0065090D
RFQ
VIEW
RFQ
2,845
In-stock
Cree/Wolfspeed MOSFET N-CH 900V 36A TO247-3 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel - 900V 36A (Tc) 78 mOhm @ 20A, 15V 2.1V @ 5mA 30.4nC @ 15V 660pF @ 600V 15V +18V, -8V
SCT3060ALGC11
RFQ
VIEW
RFQ
944
In-stock
Rohm Semiconductor MOSFET NCH 650V 39A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 165W (Tc) N-Channel - 650V 39A (Tc) 78 mOhm @ 13A, 18V 5.6V @ 6.67mA 58nC @ 18V 852pF @ 500V 18V +22V, -4V
C2M0160120D
RFQ
VIEW
RFQ
2,838
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 19A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel - 1200V 19A (Tc) 196 mOhm @ 10A, 20V 2.5V @ 500µA 32.6nC @ 20V 527pF @ 800V 20V +25V, -10V
SCT50N120
RFQ
VIEW
RFQ
2,581
In-stock
STMicroelectronics MOSFET N-CH 1.2KV TO247-3 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 318W (Tc) N-Channel - 1200V 65A (Tc) 69 mOhm @ 40A, 20V 3V @ 1mA 122nC @ 20V 1900pF @ 400V 20V +25V, -10V
SCT2H12NZGC11
RFQ
VIEW
RFQ
2,000
In-stock
Rohm Semiconductor MOSFET N-CH 1700V 3.7A - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-3PFM, SC-93-3 TO-3PFM 35W (Tc) N-Channel - 1700V 3.7A (Tc) 1.5 Ohm @ 1.1A, 18V 4V @ 900µA 14nC @ 18V 184pF @ 800V 18V +22V, -6V
SCT3160KLGC11
RFQ
VIEW
RFQ
1,359
In-stock
Rohm Semiconductor MOSFET NCH 1.2KV 17A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 103W (Tc) N-Channel - 1200V 17A (Tc) 208 mOhm @ 5A, 18V 5.6V @ 2.5mA 42nC @ 18V 398pF @ 800V 18V +22V, -4V
SCT3120ALGC11
RFQ
VIEW
RFQ
2,963
In-stock
Rohm Semiconductor MOSFET NCH 650V 21A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 103W (Tc) N-Channel - 650V 21A (Tc) 156 mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38nC @ 18V 460pF @ 500V 18V +22V, -4V
C2M0280120D
RFQ
VIEW
RFQ
2,566
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 10A TO-247-3 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 62.5W (Tc) N-Channel - 1200V 10A (Tc) 370 mOhm @ 6A, 20V 2.8V @ 1.25mA (Typ) 20.4nC @ 20V 259pF @ 1000V 20V +25V, -10V
C2M1000170D
RFQ
VIEW
RFQ
2,972
In-stock
Cree/Wolfspeed MOSFET N-CH 1700V 4.9A TO247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 69W (Tc) N-Channel - 1700V 4.9A (Tc) 1.1 Ohm @ 2A, 20V 2.4V @ 100µA 13nC @ 20V 191pF @ 1000V 20V +25V, -10V
SCT30N120
RFQ
VIEW
RFQ
1,824
In-stock
STMicroelectronics MOSFET N-CH 1200V 45A HIP247 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 270W (Tc) N-Channel - 1200V 40A (Tc) 100 mOhm @ 20A, 20V 2.6V @ 1mA (Typ) 105nC @ 20V 1700pF @ 400V 20V +25V, -10V
SCT20N120
RFQ
VIEW
RFQ
2,775
In-stock
STMicroelectronics MOSFET N-CH 1200V 20A HIP247 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 175W (Tc) N-Channel - 1200V 20A (Tc) 290 mOhm @ 10A, 20V 3.5V @ 1mA 45nC @ 20V 650pF @ 400V 20V +25V, -10V
SCT10N120
RFQ
VIEW
RFQ
3,118
In-stock
STMicroelectronics MOSFET N-CH 1.2KV TO247-3 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 150W (Tc) N-Channel - 1200V 12A (Tc) 690 mOhm @ 6A, 20V 3.5V @ 250µA 22nC @ 20V 290pF @ 400V 20V +25V, -10V
C3M0280090J
RFQ
VIEW
RFQ
3,456
In-stock
Cree/Wolfspeed MOSFET N-CH 900V 11A C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 50W (Tc) N-Channel - 900V 11A (Tc) 360 mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V 15V +18V, -8V
C3M0075120K
RFQ
VIEW
RFQ
2,586
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 30.8A TO247-4 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 119W (Tc) N-Channel - 1200V 30.8A (Tc) 90 mOhm @ 20A, 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V 15V +19V, -8V
CMF10120D
RFQ
VIEW
RFQ
965
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 24A TO247 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247-3 TO-247 134W (Tc) N-Channel - 1200V 24A (Tc) 220 mOhm @ 10A, 20V 4V @ 500µA 47.1nC @ 20V 928pF @ 800V 20V +25V, -5V