Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI4890BDY-T1-E3
RFQ
VIEW
RFQ
1,658
In-stock
Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5.7W (Tc) N-Channel - 30V 16A (Tc) 12 mOhm @ 10A, 10V 2.6V @ 250µA 33nC @ 10V 1535pF @ 15V 4.5V, 10V ±25V
SI4890BDY-T1-GE3
RFQ
VIEW
RFQ
1,538
In-stock
Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5.7W (Tc) N-Channel - 30V 16A (Tc) 12 mOhm @ 10A, 10V 2.6V @ 250µA 33nC @ 10V 1535pF @ 15V 4.5V, 10V ±25V
STW27N60M2-EP
RFQ
VIEW
RFQ
3,664
In-stock
STMicroelectronics MOSFET N-CH 600V 20A TO-220 MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 170W (Tc) N-Channel - 600V 20A (Tc) 163 mOhm @ 10A, 10V 4.75V @ 250µA 33nC @ 10V 1320pF @ 100V 10V ±25V
STF27N60M2-EP
RFQ
VIEW
RFQ
1,332
In-stock
STMicroelectronics MOSFET N-CH 600V 20A TO-220FP MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 600V 20A (Tc) 163 mOhm @ 10A, 10V 4.75V @ 250µA 33nC @ 10V 1320pF @ 100V 10V ±25V
STP27N60M2-EP
RFQ
VIEW
RFQ
719
In-stock
STMicroelectronics MOSFET N-CH 600V 20A TO-220 MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 170W (Tc) N-Channel - 600V 20A (Tc) 163 mOhm @ 10A, 10V 4.75V @ 250µA 33nC @ 10V 1320pF @ 100V 10V ±25V