Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQP630
RFQ
VIEW
RFQ
754
In-stock
ON Semiconductor MOSFET N-CH 200V 9A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 78W (Tc) N-Channel - 200V 9A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 250µA 25nC @ 10V 550pF @ 25V 10V ±25V
FQP630TSTU
RFQ
VIEW
RFQ
2,220
In-stock
ON Semiconductor MOSFET N-CH 200V 9A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 78W (Tc) N-Channel - 200V 9A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 250µA 25nC @ 10V 550pF @ 25V 10V ±25V
FDP5N50NZ
RFQ
VIEW
RFQ
3,904
In-stock
ON Semiconductor MOSFET N-CH 500V 4.5A TO220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 78W (Tc) N-Channel - 500V 4.5A (Tc) 1.5 Ohm @ 2.25A, 10V 5V @ 250µA 12nC @ 10V 440pF @ 25V 10V ±25V