- Manufacture :
- Part Status :
- Packaging :
- Technology :
- Operating Temperature :
- Mounting Type :
- Rds On (Max) @ Id, Vgs :
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12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,271
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
|
VIEW |
2,091
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
|
VIEW |
1,518
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
|
VIEW |
781
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
|
VIEW |
1,021
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
|
VIEW |
2,346
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
|
VIEW |
1,225
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
|
VIEW |
2,600
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
|
VIEW |
1,458
In-stock
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ON Semiconductor | MOSFET N-CH 60V 18A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 2.1W (Ta), 55W (Tj) | N-Channel | - | 60V | 18A (Ta) | 65 mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | 5V | ±15V | |||
|
VIEW |
1,377
In-stock
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EPC | TRANS GAN 100V 18A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 18A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | 420pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
2,564
In-stock
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EPC | TRANS GAN 100V 18A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 18A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | 420pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
1,989
In-stock
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EPC | TRANS GAN 100V 18A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 18A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | 420pF @ 50V | 5V | +6V, -4V |