Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BFL4004-1E
RFQ
VIEW
RFQ
3,338
In-stock
ON Semiconductor MOSFET N-CH 800V 4.3A - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3FS 2W (Ta), 36W (Tc) N-Channel - 800V 4.3A (Tc) 2.5 Ohm @ 3.25A, 10V - 36nC @ 10V 710pF @ 30V 10V ±30V
BFL4004
RFQ
VIEW
RFQ
3,016
In-stock
ON Semiconductor MOSFET N-CH 800V 4.3A TO-220F - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FI(LS) 2W (Ta), 36W (Tc) N-Channel - 800V 4.3A (Ta) 2.5 Ohm @ 3.25A, 10V 4V @ 1mA 36nC @ 10V 710pF @ 30V 10V ±30V
TPN22006NH,LQ
RFQ
VIEW
RFQ
2,320
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 9A 8-TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 18W (Tc) N-Channel - 60V 9A (Ta) 22 mOhm @ 4.5A, 10V 4V @ 100µA 12nC @ 10V 710pF @ 30V 6.5V, 10V ±20V
TPN22006NH,LQ
RFQ
VIEW
RFQ
2,638
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 9A 8-TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 18W (Tc) N-Channel - 60V 9A (Ta) 22 mOhm @ 4.5A, 10V 4V @ 100µA 12nC @ 10V 710pF @ 30V 6.5V, 10V ±20V
TPN22006NH,LQ
RFQ
VIEW
RFQ
1,446
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 9A 8-TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 18W (Tc) N-Channel - 60V 9A (Ta) 22 mOhm @ 4.5A, 10V 4V @ 100µA 12nC @ 10V 710pF @ 30V 6.5V, 10V ±20V