Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF510STRRPBF
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RFQ
2,981
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Vishay Siliconix MOSFET N-CH 100V 5.6A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 3.7W (Ta), 43W (Tc) N-Channel 100V 5.6A (Tc) 540 mOhm @ 3.4A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
IRFL110TRPBF
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RFQ
2,445
In-stock
Vishay Siliconix MOSFET N-CH 100V 1.5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta), 3.1W (Tc) N-Channel 100V 1.5A (Tc) 540 mOhm @ 900mA, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
IPN70R750P7SATMA1
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RFQ
3,461
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Infineon Technologies COOLMOS P7 700V SOT-223 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount SOT-223-3 PG-SOT223 6.7W (Tc) N-Channel 700V 6.5A (Tc) 750 mOhm @ 1.4A, 10V 3.5V @ 70µA 8.3nC @ 10V 306pF @ 400V 10V ±16V
IRF510STRLPBF
RFQ
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RFQ
3,588
In-stock
Vishay Siliconix MOSFET N-CH 100V 5.6A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - 43W (Tc) N-Channel 100V 5.6A (Tc) 540 mOhm @ 3.4A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
PSMN013-30YLC,115
RFQ
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RFQ
2,790
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 32A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 26W (Tc) N-Channel 30V 32A (Tc) 13.6 mOhm @ 10A, 10V 1.95V @ 1mA 8.3nC @ 10V 521pF @ 15V 10V ±20V
RCD051N20TL
RFQ
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RFQ
1,502
In-stock
Rohm Semiconductor MOSFET N-CH 200V 5A CPT3 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 850mW (Ta), 20W (Tc) N-Channel 200V 5A (Tc) 760 mOhm @ 2.5A, 10V 5.25V @ 1mA 8.3nC @ 10V 330pF @ 25V 10V ±30V
IRFR110TRLPBF
RFQ
VIEW
RFQ
1,553
In-stock
Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 25W (Tc) N-Channel 100V 4.3A (Tc) 540 mOhm @ 2.6A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
RD3T050CNTL1
RFQ
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RFQ
1,705
In-stock
Rohm Semiconductor NCH 200V 5A POWER MOSFET - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 29W (Tc) N-Channel 200V 5A (Tc) 760 mOhm @ 2.5A, 10V 5.25V @ 1mA 8.3nC @ 10V 330pF @ 25V 10V ±30V
IRFR110TRPBF
RFQ
VIEW
RFQ
2,996
In-stock
Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) N-Channel 100V 4.3A (Tc) 540 mOhm @ 2.6A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V