- Series :
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- Mounting Type :
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- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,173
In-stock
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Renesas Electronics America | MOSFET N-CH 100V 25A 5LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 30W (Tc) | N-Channel | - | 100V | 25A (Ta) | 16 mOhm @ 12.5A, 10V | - | 105nC @ 10V | 6500pF @ 10V | 7V, 10V | ±20V | |||
|
VIEW |
3,748
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-3P(N) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,656
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 230W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 99 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,983
In-stock
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STMicroelectronics | MOSFET N-CH 620V 15.0A TO220FP | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 620V | 15.5A (Tc) | 340 mOhm @ 7.5A, 10V | 4.5V @ 100µA | 105nC @ 10V | 3100pF @ 50V | 10V | ±30V | |||
