Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 2.2A PS-8 U-MOSIII-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) N-Channel - 100V 2.2A (Ta) 180 mOhm @ 1.1A, 10V 2.3V @ 1mA 7.5nC @ 10V 360pF @ 10V 4.5V, 10V ±20V
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IXYS MOSFET N-CH 900V 0.25A TO-252 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 40W (Tc) N-Channel - 900V 250mA (Tc) 80 Ohm @ 50mA, 10V 5V @ 25µA 7.5nC @ 10V 133pF @ 25V 10V ±20V
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Infineon Technologies COOLMOS P7 800V SOT-223 CoolMOS™ P7 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-223-3 PG-SOT223 6.3W (Tc) N-Channel - 800V 2.5A (Tc) 2.4 Ohm @ 800mA, 10V 3.5V @ 40µA 7.5nC @ 10V 150pF @ 500V 10V ±20V
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Infineon Technologies MOSFET N-CH 800V 2.5A TO252-3 CoolMOS™ P7 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 22W (Tc) N-Channel - 800V 2.5A (Tc) 2.4 Ohm @ 800mA, 10V 3.5V @ 40µA 7.5nC @ 10V 150pF @ 500V 10V ±20V
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Infineon Technologies MOSFET N-CH 800V 2.5A TO252-3 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 22W (Tc) N-Channel - 800V 2.5A (Tc) 2.4 Ohm @ 800mA, 10V 3.5V @ 40µA 7.5nC @ 10V 150pF @ 500V 10V ±20V
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Infineon Technologies MOSFET N-CH 800V 2.5A TO251-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 22W (Tc) N-Channel - 800V 2.5A (Tc) 2.4 Ohm @ 800mA, 10V 3.5V @ 40µA 7.5nC @ 10V 150pF @ 500V 10V ±20V
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Vishay Siliconix MOSFET N-CH 80V 4.6A TSOP-6 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 2W (Ta), 3.6W (Tc) N-Channel - 80V 4.6A (Tc) 93 mOhm @ 3.5A, 10V 3V @ 250µA 7.5nC @ 10V 195pF @ 40V 4.5V, 10V ±20V
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Vishay Siliconix MOSFET N-CH 80V 4.6A TSOP-6 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 2W (Ta), 3.6W (Tc) N-Channel - 80V 4.6A (Tc) 93 mOhm @ 3.5A, 10V 3V @ 250µA 7.5nC @ 10V 195pF @ 40V 4.5V, 10V ±20V
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Vishay Siliconix MOSFET N-CH 80V 4.6A TSOP-6 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 2W (Ta), 3.6W (Tc) N-Channel - 80V 4.6A (Tc) 93 mOhm @ 3.5A, 10V 3V @ 250µA 7.5nC @ 10V 195pF @ 40V 4.5V, 10V ±20V