Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SIS776DN-T1-GE3
RFQ
VIEW
RFQ
3,685
In-stock
Vishay Siliconix MOSFET N-CH 30V 35A 1212-8 SkyFET®, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.8W (Ta), 52W (Tc) N-Channel Schottky Diode (Body) 30V 35A (Tc) 6.2 mOhm @ 10A, 10V 2.5V @ 250µA 36nC @ 10V 1360pF @ 15V 4.5V, 10V ±20V
SQJA04EP-T1_GE3
RFQ
VIEW
RFQ
3,559
In-stock
Vishay Siliconix MOSFET N-CH 60V 75A POWERPAKSO-8 Automotive, AEC-Q101, TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PowerPAK® SO-8 68W (Tc) N-Channel - 60V 75A (Tc) 6.2 mOhm @ 10A, 10V 3.5V @ 250µA 55nC @ 10V 3500pF @ 25V 10V ±20V
SQJA04EP-T1_GE3
RFQ
VIEW
RFQ
2,086
In-stock
Vishay Siliconix MOSFET N-CH 60V 75A POWERPAKSO-8 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PowerPAK® SO-8 68W (Tc) N-Channel - 60V 75A (Tc) 6.2 mOhm @ 10A, 10V 3.5V @ 250µA 55nC @ 10V 3500pF @ 25V 10V ±20V
SQJA04EP-T1_GE3
RFQ
VIEW
RFQ
1,895
In-stock
Vishay Siliconix MOSFET N-CH 60V 75A POWERPAKSO-8 Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PowerPAK® SO-8 68W (Tc) N-Channel - 60V 75A (Tc) 6.2 mOhm @ 10A, 10V 3.5V @ 250µA 55nC @ 10V 3500pF @ 25V 10V ±20V