Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTQ200N06P
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2,225
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IXYS MOSFET N-CH 60V 200A TO-3P PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 714W (Tc) N-Channel - 60V 200A (Tc) 5 mOhm @ 400A, 15V 5V @ 250µA 200nC @ 10V 5400pF @ 25V 10V ±20V
SQJQ466E-T1_GE3
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1,988
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Vishay Siliconix MOSFET N-CH 60V 200A POWERPAK8 Automotive, AEC-Q101, TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 150W (Tc) N-Channel - 60V 200A (Tc) 1.9 mOhm @ 10A, 10V 3.5V @ 250µA 180nC @ 10V 10210pF @ 25V 10V ±20V
SQJQ466E-T1_GE3
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RFQ
3,550
In-stock
Vishay Siliconix MOSFET N-CH 60V 200A POWERPAK8 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 150W (Tc) N-Channel - 60V 200A (Tc) 1.9 mOhm @ 10A, 10V 3.5V @ 250µA 180nC @ 10V 10210pF @ 25V 10V ±20V
SQJQ466E-T1_GE3
RFQ
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RFQ
1,575
In-stock
Vishay Siliconix MOSFET N-CH 60V 200A POWERPAK8 Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 150W (Tc) N-Channel - 60V 200A (Tc) 1.9 mOhm @ 10A, 10V 3.5V @ 250µA 180nC @ 10V 10210pF @ 25V 10V ±20V